MNF | Service
The MNF facility at the Fondazione Bruno Kessler is committed to developing advanced micro devices through a holistic approach that covers every aspect of their development cycle.
Standard fabrication processes
The following is a list of the standard fabrication processes commonly used in the MNF Cleanrooms. Any Process included in the list can be requested and executed without additional approval.
- Full Silicon processing 150 mm Wafers down to 0.5 µm Linewidth (Stepper)
- Full Silicon processing 150 mm Wafers down to 2.5 µm Linewidth (Mask-aligner)
- Doubleside Processing (preliminary Process Flow Check requested)
- Bulk & Surface Micromachining (MEMS)
- Deep trenches and TSV with a Adixen ASM DRIE
- Thin film deposition with controlled mechanical features with a STS PECVD.
- Submicron lithography with a Nikon stepper
- TMAH bulk micromachining
- Thick film electroplating – Au, Cu, Ag
- Dry film processing
- Stencil Screen printing
- Thermocompression bonding on various substrate type & size
- AuSn Eutectic bonding
- Lift-off Process
- Galvanic Gold Deposition
- Large Area Radiation Detectors
- Wafer Level Bonding
- Standard Substrates: Si & Quartz wafers, 150 mm, 250 – 675 um thick, primary flat only.
For any inquiry about cleanroom and testing services please contact Francesco Ficorella.
MNF capabilities
Information about equipment and laboratories available within the MNF unit.
The Micro Nanofabrication Facility (MNF) manages the laboratories and facilities of common interest for all the units of the Center. Specifically, MNF runs three fabrication cleanrooms, dedicated to silicon based radiation detectors and integrated photonics, to MEMS and NEMS and to the 3D integration platform.
The Functional Test Lab hosts four test-benches aimed at microchip electrical characterization, PCB assembly and testing, and one climatic chamber for temperature characterization. Every bench is equipped with several power supplies, oscilloscopes, digital and analog acquisition boards. A dedicated testbench is set up for measurement and characterization of TeraHertz detectors up to 1.1THz frequency.