Publications | MNF
- Shallow junctions fabrication by using molibdenum silicide and rapid thermal annealing; Angelucci, R.; Merli, M.; Dori, L.; Pizzochero, G.; Solmi, S.; Canteri, R.; 1989; pp. 4
- Reduction of Phosphorus Transient Enhanced Diffusion Due to Extended Defects in Ion Implanted Silicon; M., Servidori; F., Cembali; R., Fabbri; E., Gabilli; P., Negrini; S., Solmi; P., Zaumseil; U., Winter; Anderle, Mariano; Canteri, Roberto; NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS; Vol. 39>; 1989; pp. 347-351
- Non-Linear Phenomena in Hydrogen Implantation into (100) Silicon; G. F., Cerofolini; L., Meda; C., Volpones; R., Dierckx; G., Mercurio; Anderle, Mariano; Canteri, Roberto; F., Cembali; R., Fabbri; M., Servidori; NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS; Vol. 39>; 1989; pp. 26-29
- Hydrogen Implantation into (100) Silicon: A Study of the Released Damage; L., Meda; G. F., Cerofolini; R., Dierckx; G., Mercurio; M., Servidori; F., Cembali; Anderle, Mariano; Canteri, Roberto; G., Ottaviani; C. L., Claeys; J., Vanhellement; NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS; Vol. 39>; 1989; pp. 381-385
- Dependence of transient enhanced diffusion on defect depth position in ion implanted silicon; Solmi, S.; Cembali, F.; Fabbri, R.; Lotti, R.; Servidori, M.; Anderle, M.; Canteri, R.; NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS; Vol. 37-38>; N. C; 1989; pp. 4
- Dependence of Transient Enhanced Diffusion on Defects Depth Position in Ion Implanted Silicon; Sandro, Solmi; F., Cembali; R., Fabbri; R., Lotti; M., Servidori; Anderle, Mariano; Canteri, Roberto; NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS; Vol. 37/38>; 1989; pp. 349-397
- Dependence of Anomalous Phosphorus Diffusion in Silicon on Depth Position of Defects Created by Ion Implantation; Sandro, Solmi; F., Cembali; R., Fabbri; M., Servidori; Canteri, Roberto; APPLIED PHYSICS. A, SOLIDS AND SURFACES; Vol. 48>; 1989; pp. 255-260
- On the silicon dioxide/polycrystalline silicon interface width measurement; Giuseppe, Queirolo; S., Manzini; L., Meda; Canteri, Roberto; Anderle, Mariano; A., Armigliato; S., Frabboni; SURFACE AND INTERFACE ANALYSIS; Vol. 13>; N. 4; 1988; pp. 202-208
- BF2+ Ion implantation in silicon; Queirolo, G.; Bresolin, C.; Meda, L.; Anderle, M.; Canteri, R.; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; Vol. 135>; N. 3; 1988; pp. 4
- BF2 Ion Implantation in Silicon: Effects of the In-Flight Ion Dissociation; Giuseppe, Queirolo; C., Bresolin; L., Meda; Anderle, Mariano; Canteri, Roberto; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; Vol. 135>; 1988; pp. 777-780
- Grain boundary segregation of oxygen and carbon in polycrystalline silicon.; S., Pizzini; P., Cagnoni; A., Sandrinelli; Anderle, Mariano; Canteri, Roberto; APPLIED PHYSICS LETTERS; Vol. 51>; 1987; pp. 676-678