Publications | MNF
- Boron Ion Implantation through Mo and Mo Silicide Layers for Shallow Junction Formation; R., Angelucci; Sandro, Solmi; A., Armigliato; S., Guerri; M., Merli; A., Poggi; Canteri, Roberto; JOURNAL OF APPLIED PHYSICS; Vol. 69>; N. 7; 1991; pp. 3962-3967
- Boron and Antimony Codiffusion in Silicon; Margesin, Benno; Canteri, Roberto; Sandro, Solmi; A., Armigliato; F., Baruffaldi; JOURNAL OF MATERIALS RESEARCH; Vol. 6>; N. 11; 1991; pp. 2352-2361
- Ambient gas-induced SiC-like structures in edge-defined film-fed grown polycrystalline silicon samples; Pivac, B.; Borghesi, A.; Canteri, R.; Anderle, M.; JOURNAL OF MATERIALS SCIENCE; Vol. 26>; N. 10; 1991; pp. 6
- Ambient Gas Induced SiC-like Structures in Edge-Defined Film-Fed Growth Polycrystalline Silicon Samples; B., Pivac; A., Borghesi; Canteri, Roberto; Anderle, Mariano; JOURNAL OF MATERIALS SCIENCE; Vol. 26>; 1991; pp. 2715-2730
- Acquisizione per immagine nella spettrometria di massa di ioni secondari; Canteri, Roberto; 1991; pp. 235-244
- Structure and Evolution of the Displacement Field in Hydrogen-Implanted Silicon; G. F., Cerofolini; L., Meda; G., Ottaviani; J., Defayette; R., Dierckx; D., Donelli; M., Orlandini; Anderle, Mariano; Canteri, Roberto; C. L., Claeys; J., Vanhellemont; C., Volpones; PHYSICAL REVIEW. B, CONDENSED MATTER; Vol. 41>; 1990; pp. 12607-12618
- State and evolution of hydrogen implanted in silicon; Meda, L.; Cerofolini, G. F.; Bresolin, C.; Dierckx, R.; Donelli, D.; Orlandini, M.; Anderle, M.; Canteri, R.; Ottaviani, G.; Tonini, R.; Claeys, C.; Vanhellemont, J.; Pizzini, S.; Farina, S.; Vol. 90>; N. 7; 1990; pp. 16
- Correlation between microstructural and {SIMS} analyses of cast irons inoculated with {CG} alloy; Tiziani, A.; Molinari, A.; Canteri, R.; Anderle, M.; JOURNAL OF MATERIALS SCIENCE; Vol. 25>; N. 2; 1990; pp. 7
- Correlation between microstructure and SIMS analyses of cast irons incoulated with CG alloy; Tiziani, A.; Molinari, A.; Canteri, R.; Anderle, M.; JOURNAL OF MATERIALS SCIENCE; Vol. 25>; N. 2 A; 1990; pp. 7
- A Comparison between Zero and Seven Degree of Tilt Implantation of As+, P+ and BF2+; C., Bresolin; C., Zaccherini; Anderle, Mariano; Canteri, Roberto; NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS; Vol. 51>; 1990; pp. 122-124
- A comparison between zero and seven degrees of tilt implantation of As+, P+ and BF2 +; Bresolin, C.; Zaccherini, C.; Anderle, M.; Canteri, R.; NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS; Vol. 51>; N. 2; 1990; pp. 3
- Structural investigation of Al2O3 formed by ion implantation at various doses; P., Pawar; D., Kothari; Arun, Narsale; P., Raole; S., Gogawale; Luis, Guzman; Stefano, Girardi; Dapor, Maurizio; Anderle, Mariano; Canteri, Roberto; NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS; Vol. B39>; 1989; pp. 670-674