Damiano Giubertoni

Ricercatore MTSD | Materials and Topologies for Sensors and Devices

Contacts

+39 0461 314479

Links

ORCID

Publications

Grazing incidence x-ray fluorescence modelling of complex surfaces as applied to diffusion barriers for cultural heritage objects; Brigidi, Fabio; A. E., Marquardt; Demenev, Evgeny; Giubertoni, Damiano; R., Phaneuf; Pepponi, Giancarlo; EXRS2014; 2014
GIXRF characterization of thin Ge1-xSnx films; Brigidi, Fabio; Secchi, Maria; Demenev, Evgeny; Giubertoni, Damiano; Pepponi, Giancarlo; EXRS2014; 2014
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy; Secchi, Maria; Demenev, Evgeny; Giubertoni, Damiano; Iacob, Erica; Bersani, Massimo; 19th International Conference on Ion Beam Modification of Materials (September 14 - 19, 2014, Leuven, Belgium); 2014
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy; Secchi, Maria; Demenev, Evgeny; Giubertoni, Damiano; Iacob, Erica; Bersani, Massimo; 19th International Conference on Ion Beam Modification of Materials (September 14 - 19, 2014, Leuven, Belgium); 2014
Deuterium depth profile quantification in a ASDEX Upgrade divertor tile using secondary ion mass spectrometry; F., Ghezzi; R., Caniello; Giubertoni, Damiano; Bersani, Massimo; A., Hakola; M., Mayer; V., Rohde; M., Anderle; ASDEX Upgrade, Team; APPLIED SURFACE SCIENCE; 2014
Combined evaluation of grazing incidence X-ray fluorescence and X-ray reflectivity data for improved profiling of ultra-shallow depth distributions; D., Ingerle; F., Meirer; Pepponi, Giancarlo; Demenev, Evgeny; Giubertoni, Damiano; P., Wobrauschek; C., Streli; SPECTROCHIMICA ACTA, PART B: ATOMIC SPECTROSCOPY; Vol. 99>; 2014; pp. 121-128
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls; Secchi, Maria; Demenev, Evgeny; Giubertoni, Damiano; Vanzetti, Lia Emanuela; Bersani, Massimo; 19th International Conference on Ion Beam Modification of Materials (September 14 - 19, 2014, Leuven, Belgium); 2014
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls; Secchi, Maria; Demenev, Evgeny; Giubertoni, Damiano; Vanzetti, Lia Emanuela; Bersani, Massimo; 19th International Conference on ion Beam Modification of Materials (September 14 - 19, 2014, Leuven, Belgium); 2014
Wettability on Ge nano honeycombs created by high fluence ion implantation.; Secchi, M.; Giubertoni, Damiano; Demenev, Evgeny; Gennaro, S.; Meirer, F.; Iacob, Erica; Lepore, E.; Pugno, N.; Bersani, Massimo; NanotechItaly 2013 (27-29 November 2013, Venice, Italy); 2013
Tuning of the Optical Properties of In-rich InxGa1-xN (x=0.82-0.49) Alloys by Light-ion Irradiation at Low Energy.; M., De Luca; G., Pettinari; A., Polimeni; M., Capizzi; G., Ciatto; L., Amidani; E., Fonda; F., Boscherini; F., Filippone; Aa, Bonapasta; A., Knubel; V., Cimalla; O., Ambacher; Giubertoni, Damiano; Bersani, Massimo; THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 (29/07/2012 –03/08/2012, Zurigo); AIP CONFERENCE PROCEEDINGS; Vol. 1566>; 2013; pp. 93-94
Time-dependent observations of arsenic ultra shallow junctions formed by AsH3 Plasma Immersion Ion Implantation and Deposition in Silicon; Meirer, Florian; Demenev, Evgeny; Giubertoni, Damiano; Gennaro, Salvatore; Vanzetti, Lia Emanuela; Pepponi, Giancarlo; Steinhauser, G.; Vishwanath, V.; Mehta, A.; Pianetta, P.; Bersani, Massimo; Foad, M.; E-MRS Spring Meeting (May 27th - May 31st, 2013, Starsbourg, France); 2013
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation.; Barozzi, Mario; Giubertoni, Damiano; Iacob, Erica; Bersani, Massimo; SIMS XIX (29 settembre-4 ottobre, Jeju, Korea); 2013