Damiano Giubertoni

Ricercatore MTSD | Materials and Topologies for Sensors and Devices

Contacts

+39 0461 314479

Links

ORCID

Publications

The role of incidence angle in the morphology evolution of Ge surfaces irradiated by medium-energy Au ions; Dell'Anna, Rossana; Iacob, Erica; Barozzi, Mario; Vanzetti, Lia; Hübner, René; Boettger, Roman; Giubertoni, Damiano; Pepponi, Giancarlo; JOURNAL OF PHYSICS. CONDENSED MATTER; Vol. 30>; N. 32; 2018; pp. 324001-324011
Multiscale structured germanium nanoripples as templates for bioactive surfaces; Dell'Anna, Rossana; Masciullo, Cecilia; Iacob, Erica; Barozzi, Mario; Giubertoni, Damiano; Böttger, Roman; Cecchini, Marco; Pepponi, Giancarlo; RSC ADVANCES; Vol. 7>; N. 15; 2017; pp. 9024-9030
Nanofabrication of self-organized periodic ripples by ion beam sputtering; Iacob, Erica; Dell'Anna, Rossana; Giubertoni, Damiano; Demenev, Evgeny; Secchi, Maria; Böttger, Roman; Pepponi, Giancarlo; MICROELECTRONIC ENGINEERING; Vol. 155>; 2016; pp. 50-54
Silicon defects characterization for low temperature ion implantation and RTA process; Martirani Paolillo, Diego; Margutti, Giovanni; De Biase, Marco; Barozzi, Mario; Giubertoni, Damiano; Spaggiari, Claudio; NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS; Vol. 365>; 2015; pp. 283-287
Peculiarities of the hydrogenated In(AsN) alloy; Birindelli, S; Kesaria, M; Giubertoni, Damiano; Pettinari, G; Velichko, A. V; Zhuang, Q. D; Krier, A; Patanè, A; Polimeni, A; Capizzi, M.; SEMICONDUCTOR SCIENCE AND TECHNOLOGY; Vol. 30>; N. 10; 2015; pp. 10
H-tailored surface conductivity in narrow band gap In(AsN); A. V., Velichko; A., Patanè; M., Capizzi; I. C., Sandall; Giubertoni, Damiano; O., Makarovsky; A., Polimeni; A., Krier; Q., Zhuang; C. H., Tan; APPLIED PHYSICS LETTERS; Vol. 106>; N. 2; 2015; pp. 4
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface; Vishwanath, V.; Demenev, Evgeny; Giubertoni, Damiano; Vanzetti, Lia Emanuela; Koh, A. L.; Steinhauser, G.; Pepponi, Giancarlo; Bersani, Massimo; Meirer, Florian; Foad, M. A.; APPLIED SURFACE SCIENCE; Vol. 355>; 2015; pp. 792-799
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy; Secchi, Maria; Demenev, Evgeny; C, ; Colaux, J. L.; Giubertoni, Damiano; Dell'Anna, Rossana; Iacob, Erica; Gwilliam, R. M.; Jeynes, C.; Bersani, Massimo; APPLIED SURFACE SCIENCE; Vol. 356>; 2015; pp. 422-428
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study; Meirer, Florian; Demenev, Evgeny; Giubertoni, Damiano; Vanzetti, Lia Emanuela; Gennaro, Salvatore; Fedrizzi, Michele; Pepponi, Giancarlo; Steinhauser, G.; Vishwanath, V.; Foad, M. A.; Bersani, Massimo; PHYSICA STATUS SOLIDI. C; Vol. 11>; N. 1; 2014; pp. 28-31
Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab; Iacob, Erica; Vanzetti, Lia Emanuela; Gennaro, S.; Pecoraro, F.; Giubertoni, Damiano; Barozzi, Mario; Bortolotti, M.; Pepponi, Giancarlo; Fedrizzi, Michele; Bersani, Massimo; SURFACE AND INTERFACE ANALYSIS; Vol. 46>; 2014; pp. 927-930
On an improved boron segregation calibration from a particularly sensitive power MOS process; Koffel, S.; Burenkov, A.; Sekowski, M.; Pichler, P.; Giubertoni, Damiano; Bersani, Massimo; Knaipp, M.; Wachmann, E.; Schrems, M.; Yamamoto, Y.; Bolze, D.; PHYSICA STATUS SOLIDI. C; Vol. 11>; N. 1; 2014; pp. 12-15
Observation of point defect injection from electrical de-activation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing; Demenev, Evgeny; Meirer, Florian; Essa, Z.; Giubertoni, Damiano; Cristiano, F.; Pepponi, Giancarlo; Gennaro, Salvatore; Bersani, Massimo; Foad, M. A.; PHYSICA STATUS SOLIDI. C; Vol. 11>; N. 1; 2014; pp. 28-31