MNF | Publications

Sintering and microstructure of phosphorous steels; Molinari, A.; Straffelini, G.; Fontanari, V.; Canteri, R.; POWDER METALLURGY; Vol. 35>; N. 4; 1992; pp. 7
Sintering and Microstructure of Phosphorus Steels; A., Molinari; G., Straffelini; V., Fontanari; Canteri, Roberto; POWDER METALLURGY; Vol. 35>; N. 4; 1992; pp. 285-292
Shallow Junction Formation Using MoSi2 as Diffusion Source; R., Angelucci; M., Impronta; G., Pizzocchero; A., Poggi; Sandro, Solmi; Canteri, Roberto; MICROELECTRONIC ENGINEERING; Vol. 19>; 1992; pp. 673-678
Hydrogen- related complexes as the Stressing Species in High-Fluence, Hydrogen-Implanted, Single Crystal Silicon; G. F., Cerofolini; L., Meda; R., Balboni; F., Corni; S., Frabboni; G., Ottaviani; Rita, Tonini; Anderle, Mariano; Canteri, Roberto; PHYSICAL REVIEW. B, CONDENSED MATTER; Vol. 46>; N. 4; 1992; pp. 2061-2070
Anomalous Diffusion of Fluorine in Silicon; S. P., Jeng; T., Ma; Anderle, Mariano; Gary Wayne, Rubloff; Canteri, Roberto; APPLIED PHYSICS LETTERS; Vol. 61>; N. 11; 1992; pp. 1310-1312
Low Temperature Dopant Activation of BF2 Implanted Silicon; G., Queirolo; C., Bresolin; D., Robba; Anderle, Mariano; Canteri, Roberto; A., Armigliato; G., Ottaviani; S., Frabboni; JOURNAL OF ELECTRONIC MATERIALS; Vol. 20>; N. 5; 1991; pp. 373-378
Influence of Implant Dose and Target Temperature on Crystal Quality and Junction Depth of Boron-Doped Silicon Layers; R., Fabbri; M., Servidori; S., Solmi; S., Frabboni; G., Ottaviani; Rita, Tonini; Canteri, Roberto; APPLIED PHYSICS. A, SOLIDS AND SURFACES; Vol. 53>; 1991; pp. 222-226
Evidence for Molecular Hydrogen in Single Crystal Silicon; L., Meda; G. F., Cerofolini; G., Ottaviani; R., Tonini; F., Corni; R., Balboni; Anderle, Mariano; Canteri, Roberto; R., Dierckx; PHYSICA. B, CONDENSED MATTER; Vol. 170>; 1991; pp. 259-264
Electrical and Structural Characterization of Silicon Layers Directly Doped with Boron by Excimer Laser Irradiation; R., Nipoti; M., Bianconi; R., Fabbri; M., Servidori; S., Nicoletti; Canteri, Roberto; APPLIED SURFACE SCIENCE; Vol. 43>; 1991; pp. 321-324
Diffusion of Boron in Silicon During Post-Implantation Annealing; Sandro, Solmi; F., Baruffaldi; Canteri, Roberto; JOURNAL OF APPLIED PHYSICS; Vol. 69>; N. 4; 1991; pp. 2135-2142
Diffusion of Boron and Arsenic in Molybdenum Disilicide Films; Sandro, Solmi; R., Angelucci; G., Cicognani; Canteri, Roberto; APPLIED SURFACE SCIENCE; Vol. 53>; 1991; pp. 186-189
Correlation between Microstructural and SIMS Analysis of Cast Irons Inoculated with CG Alloy; A., Tiziani; A., Molinari; Anderle, Mariano; Canteri, Roberto; JOURNAL OF MATERIALS SCIENCE; Vol. 25>; 1991; pp. 1018-1024